Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

• Jakub Kierdaszuk,
• Piotr Kaźmierczak,
• Justyna Grzonka,
• Aleksandra Krajewska,
• Aleksandra Przewłoka,
• Wawrzyniec Kaszub,
• Zbigniew R. Zytkiewicz,
• Marta Sobanska,
• Maria Kamińska,
• Andrzej Wysmołek and
• Aneta Drabińska

Beilstein J. Nanotechnol. 2021, 12, 566–577, doi:10.3762/bjnano.12.47

• Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668, Warsaw, Poland 10.3762/bjnano.12.47 Abstract We present detailed Raman studies of graphene deposited on gallium nitride nanowires with different variations in height. Our results indicate that different density and height of

• graphene deposited on gallium nitride nanowires (GaN NWs) with different variations in height. The electric field induced in GaN predicted by theoretical calculations could reach 5 MV/cm [21]. This is an effect of high spontaneous and piezoelectric polarisations in the wurtzite structure of GaN

Optimization of the optical coupling in nanowire-based integrated photonic platforms by FDTD simulation

• Nan Guan,
• Andrey Babichev,
• Martin Foldyna,
• Dmitry Denisov,
• François H. Julien and
• Maria Tchernycheva

Beilstein J. Nanotechnol. 2018, 9, 2248–2254, doi:10.3762/bjnano.9.209

• design reported in the literature with a coupling efficiency of only 8.7%, we propose an optimized photonic platform with efficiency reaching 65.5%. Keywords: FDTD modeling; nanowire LED; nitride nanowires; photonic integrated circuit; photonic platform; SiN/InGaN co-integration; visible light

• tunable bandgap [14] and reduced dislocation density [15][16], nitride nanowires (NWs) have become important materials for optical components in the visible to ultraviolet (UV) spectral range [17][18]. Despite their small size, single NW light emitting diodes (LEDs) can produce bright electroluminescence

Electrical contacts to individual SWCNTs: A review

• Wei Liu,
• Christofer Hierold and
• Miroslav Haluska

Beilstein J. Nanotechnol. 2014, 5, 2202–2215, doi:10.3762/bjnano.5.229

• low-stress silicon nitride. Nanowires were thus formed by depositing metal through the nanoslits without using any photo/e-beam resist. Post-metallization annealing The metal–SWCNT contact performance can be further improved by post-metallization annealing. With this approach, the following benefits